Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same
US6358770B2 · kind B2 · utility
78Cited by
4References
11Claims
0Family size
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Key dates
| Filing date | Jan 12, 2001 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Jan 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02614
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing nitride semiconductor crystals according to the present invention includes the steps of: a) forming a first metal single crystal layer on a substrate; b) forming a metal nitride single crystal layer by nitrifying the first metal single crystal layer; and c) epitaxially growing a first nitride semiconductor layer on the metal nitride single crystal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.