Capacitor of semiconductor device and method of fabricating the same
US6358794B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 26, 1999 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Aug 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor of a semiconductor device is provided which includes a semiconductor substrate, an insulating interlayer formed on the semiconductor substrate, the insulating interlayer having a contact hole which exposes a predetermined portion of the semiconductor substrate, a plug filled in the contact hole, the plug coming into contact with the semiconductor substrate, a contact layer formed on the insulating interlayer, the contact layer coming into contact with the plug, first and second barrier layers formed on the surface and sides of the contact layer, a lower electrode formed on the first barrier layer, a dielectric layer formed on the second barrier layer and lower electrode, and a upper electrode formed on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.