Solution to black diamond film delamination problem
US6358839B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2000 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | May 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Low k dielectrics such as black diamond have a tendency to delaminate from the edges of a silicon wafer, causing multiple problems, including blinding of the alignment mark. This problem has been overcome by inserting a layer of silicon nitride between the low k layer and the substrate. A key requirement is that said layer of silicon nitride be under substantial compressive stress (at least 5×109 dynes/cm2). In the case of a layer of black diamond, on which material the invention is particularly focused, a nucleating layer is also inserted between the silicon nitride and the black diamond. A process for laying down the required layers is described together with an example of applying the invention to a dual damascene structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.