Thin-film transistor with lightly-doped drain
US6359320B1 · kind B1 · utility
73Cited by
7References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1999 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Aug 31, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs and provides high productivity and a method for manufacturing the same.In order to achieve the object, the design of a second mask is appropriately determined in accordance with requirements associated with the circuit configuration to make it possible to form a desired LDD region on both sides or one side of the channel formation region of a TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.