Static semiconductor memory cell formed in an n-well and p-well
US6359804B2 · kind B2 · utility
111Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 1998 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Oct 6, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/903
Abstract
A memory cell includes an n well and a p well. A word line is provided over memory cell and n well and p well are arranged in a direction in which word line extends. A single word line is provided for each memory cell and formed of metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.