Method and apparatus for chemical mechanical polishing
US6361647B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 2, 1999 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Nov 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A chemical mechanical polishing method and apparatus (100) includes a control mechanism (190) having control programs for operating the apparatus in accordance with the invention. The apparatus includes a memory store (192) for containing an offset distance and an additional memory store for containing a velocity profile. A polish operation is achieved either by providing a polishing path based on the offset distance. A method (FIG. 7) and system (FIG. 8) for calibrating a polishing apparatus includes iteratively selecting an offset distance, performing a polish, inspecting the resulting removal profile, and repeating until a desired characteristic in the removal profile is attained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.