Chemical mechanical polishing method useful for copper substrates
US6362106B1 · kind B1 · utility
16Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2000 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Sep 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.