Ferroelectric memory with bipolar drive pulses
US6363002B1 · kind B1 · utility
35Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1998 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Dec 31, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An FeRAM in which sensing occurs without a dummy cell, using an unselected bitline as a reference. The read cycle includes two opposed pulses on the drive line: the first pulse provides a data-dependent signal out of the selected cell, and the second pulse restores the bit line to a level such that the DC bias voltage on an unselected bitline provides an optimal reference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.