Sputtering apparatus and process for high rate coatings
US6365010B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 16, 1999 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Sep 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering apparatus and method for high rate deposition of electrically insulating and semiconducting coatings with substantially uniform stoichiometry. Vertically mounted, dual rotatable cylindrical magnetrons with associated vacuum pumps form semi-isolated sputtering modules, which can be independently controlled for the sequential deposition of layers of similar or different materials. Constant voltage operation of AC power with an optional reactive gas flow feedback loop maintains constant coating stoichiometry during small changes in pumping speed caused by substrate motion. The coating method is extremely stable over long periods (days) of operation, with the film stoichiometry being selectable by the voltage control point. The apparatus may take the form of a circular arrangement of modules for batch coating of wafer-like substrates, or the modules may be arranged linearly for the coating of large planar substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.