Method for depositing high density plasma chemical vapor deposition oxide in high aspect ratio gaps
US6365015B1 · kind B1 · utility
7Cited by
10References
1Claims
0Family size
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Key dates
| Filing date | Jun 19, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Jun 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a HDPCVD oxide layer over metal lines, the metal lines having gaps between the metal lines having an aspect ratio of two or more. The method comprises the steps of: forming a liner oxide layer over the metal lines; and forming an HDPCVD oxide layer over the liner oxide layer, the formation of the HDPCVD oxide layer being done such that the deposition-to-sputter ratio is increasing as the gaps are being filled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.