Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process
US6365231B2 · kind B2 · utility
11Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1999 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Jun 25, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/452
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a chemical vapor deposition using, as feed gases, a silicon compound and hydrazine or a derivative thereof, or a compound containing both silicon and nitrogen, and a process and a system useful for chemical vapor deposition growth, in which a chlorinated silane compound and ammonia, feed gases, are preliminarily reacted with each other, and the resulting reaction gas mixture from which the ammonium halide produced by the preliminary reaction has been eliminated is fed to form a thin film on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.