Inventor · Oshima, JP

Naoki Tamaoki

11Patents
5h-index
22Co-inventors
66Inventor score

Filing activity: Mar 10, 1995 → Sep 1, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US7192626B2 Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition Electricity 75 Expired
US8821684B2 Substrate plasma processing apparatus and plasma processing method Electricity 41 Active
US6022806A Method of forming a film in recess by vapor phase growth Electricity 26 Expired
US6365231B2 Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process Chemistry; Metallurgy 11 Expired
US5926402A Simulation method with respect to trace object that event occurs in proportion to probability and computer program product for causing computer system to perform the simulation Emerging Cross-Sectional Technologies 5 Expired
US8209155B2 Simulation method and simulation program Physics 2 Active
US8252193B2 Plasma processing apparatus of substrate and plasma processing method thereof Electricity 1 Active
US8548787B2 Simulating a chemical reaction phenomenon in a semiconductor process Physics 1 Active
US10460050B2 Topography simulation apparatus, topography simulation method, and topography simulation program Physics 0 Active
US7942974B2 Method of cleaning a film-forming apparatus Chemistry; Metallurgy 0 Active
US9996639B2 Topography simulation apparatus, topography simulation method and recording medium Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.