Magnetic element, magnetic memory device, magnetoresistance effect head, and magnetic storage system
US6365286B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1999 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Sep 2, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1193
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetic element which has a laminate film composed of ferromagnetic-dielectric mixed layer and dielectric layer laminated alternately, said ferromagnetic-dielectric mixed layer being a mixture of a ferromagnetic material having coercive force and a dielectric material, with the volume of the former being equal to or larger than that of the latter. The ferromagnetic-dielectric mixed layer 3 has the ferromagnetic layer 1 which is arranged close thereto with a dielectric layer interposed between them. Tunnel current flows between the ferromagnetic-dielectric mixed layer. The magnetic layer with a smaller coercive force has its spin switched so that the magnetoresistance effect is produced. The magnetic element having a ferromagnetic tunnel junction is designed such that the rate of change in magnetoresistance increases and the resistance of the element decreases and the rate of change in magnetoresistance varies less depending on voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.