Method of improving electromigration in semiconductor device manufacturing processes
US6365503B1 · kind B1 · utility
3Cited by
1References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Jun 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of forming an electromigration resisting layer in a semiconductor device. In an exemplary embodiment, the method comprises depositing a corrosion inhibitor comprising an organic ligand on a conductive layer of a semiconductor device wherein the conductive layer is susceptible to electromigration. The method further includes subjecting the corrosion inhibitor and the semiconductor device to a high temperature anneal to form an electromigration resisting layer on the conductive layer that reduces electromigration of the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.