Method for fabricating a contact layer

US6365510B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Sven Schmidbauer · Dresden, DE
• Norbert Urbansky · Dresden, DE

Key dates

• Filing date: Mar 19, 2001
• Grant date: Apr 2, 2002
• Expiry date: Mar 19, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/909
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A contact layer is used, for example, as a liner for the fabrication of electrical contacts in contact holes. The contact layer is fabricated in two steps, in a first step a first contact layer is deposited, in which only a small proportion of the particles to be sputtered is ionized. In a second sputtering step, a second contact layer is sputtered, in the course of whose fabrication a larger proportion of the particles to be sputtered is ionized. The procedure ensures that the first contact layer is disposed as a protective layer on the substrate by gentle sputtering before the second contact layer is sputtered.