Two chamber metal reflow process
US6365514B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1997 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Dec 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention describes an improved process for forming an aluminum or aluminum alloy plug in the fabrication of a semiconductor device. An opening is formed in a wafer. A titanium wetting layer is then deposited over the wafer and lines the sidewalls and bottom of the opening. A first aluminum deposition step is performed at a first power in a hot deposition chamber. A second aluminum deposition step is performed at a second higher power in a cold deposition chamber. The present invention forms the aluminum plug without the problems of void formation and without reaching temperatures that could cause damage to underlying layers during the fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.