Jick Yu
29Patents
10h-index
37Co-inventors
75Inventor score
Filing activity: Nov 9, 1984 → Sep 7, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7049226B2 | Integration of ALD tantalum nitride for copper metallization | Electricity | 474 | Expired |
| US4587138A | MOS rear end processing | Emerging Cross-Sectional Technologies | 51 | Expired |
| US6936906B2 | Integration of barrier layer and seed layer | Emerging Cross-Sectional Technologies | 40 | Expired |
| US7265048B2 | Reduction of copper dewetting by transition metal deposition | Electricity | 35 | Expired |
| US7294574B2 | Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement | Electricity | 28 | Expired |
| US4620986A | MOS rear end processing | Emerging Cross-Sectional Technologies | 27 | Expired |
| US7737028B2 | Selective ruthenium deposition on copper materials | Electricity | 20 | Active |
| US5693564A | Conductor fill reflow with intermetallic compound wetting layer for semiconductor fabrication | Emerging Cross-Sectional Technologies | 18 | Expired |
| US8324095B2 | Integration of ALD tantalum nitride for copper metallization | Electricity | 17 | Active |
| US5804251A | Low temperature aluminum alloy plug technology | Electricity | 16 | Expired |
| US7704887B2 | Remote plasma pre-clean with low hydrogen pressure | Electricity | 8 | Active |
| US6365514B1 | Two chamber metal reflow process | Electricity | 6 | Expired |
| US7494908B2 | Apparatus for integration of barrier layer and seed layer | Emerging Cross-Sectional Technologies | 6 | Active |
| US8021514B2 | Remote plasma source for pre-treatment of substrates prior to deposition | Electricity | 6 | Active |
| US8580354B2 | Plasma treatment of substrates prior to deposition | Electricity | 6 | Active |
| US6884329B2 | Diffusion enhanced ion plating for copper fill | Electricity | 5 | Expired |
| US7352048B2 | Integration of barrier layer and seed layer | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6899796B2 | Partially filling copper seed layer | Electricity | 4 | Expired |
| US8119525B2 | Process for selective growth of films during ECP plating | Electricity | 4 | Active |
| US6887786B2 | Method and apparatus for forming a barrier layer on a substrate | Electricity | 4 | Expired |
| US8349724B2 | Method for improving electromigration lifetime of copper interconnection by extended post anneal | Electricity | 3 | Active |
| US7659204B2 | Oxidized barrier layer | Electricity | 3 | Active |
| US6730598B1 | Integration of annealing capability into metal deposition or CMP tool | Chemistry; Metallurgy | 1 | Expired |
| US8557094B2 | Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum | Electricity | 1 | Active |
| US8852674B2 | Method for segregating the alloying elements and reducing the residue resistivity of copper alloy layers | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.