Method of processing a substrate in a processing chamber
US6365518B1 · kind B1 · utility
59Cited by
5References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2001 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Mar 26, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for processing a substrate are disclosed. In one embodiment of the invention, a substrate with a first layer and an oxide layer on the substrate is placed in a processing chamber. The oxide layer is removed while the substrate is at a first temperature in the processing chamber. A second layer is then formed on the first layer while the substrate is at a second temperature in the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.