Dual gate field effect transistor utilizing Mott transition materials
US6365913B1 · kind B1 · utility
25Cited by
2References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1999 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Nov 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N99/03
Abstract
A Field effect transistor semiconductor switch in which the channel of same is made from materials having an electrical conductivity which can undergo an insulator-metal transistor (i.e., Mott transition) upon application of an electric field. The channel contains the Mott material in which the charge carriers, either holes or electrons, are strongly correlated. The Mott transition determines the metal-insulator switching and is demonstrated to be controlled by an external gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.