Method and device for interconnected radio frequency power SiC field effect transistors
US6365918B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 1999 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Oct 12, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method and device for interconnecting radio frequency power SiC field effect transistors. To improve the parasitic source inductance advantage is taken of the small size of the transistors, wherein the bonding pads are placed on both sides of the die in such a way that most of the source bonding wires (6) go perpendicularly to the gate and drain bonding wires (7, 8). Multiple bonding wires can be connected to the source bonding pads, reducing the source inductance. An additional advantage comes from such arrangement by reducing the mutual inductance between source/gate and between source/drain due to the orthogonal wire placement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.