Patent · US Expired

Silicon carbide junction field effect transistor

US6365919B1 · kind B1 · utility

17Cited by

4References

4Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jenoe Tihanyi · Tauberbischofsheim, DE
Heinz Mitlehner · Uttenreuth, DE
Wolfgang Bartsch · Viernheim, DE

Key dates

Filing date	Jul 11, 2000
Grant date	Apr 2, 2002
Priority date	—
Expiry date	Jul 11, 2020

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/519
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A lateral silicon carbide junction field effect transistor has p-conductive and n-conductive silicon carbide layers. The layers are provided in pairs in lateral direction in a silicon carbide body. Trenches for a source, a drain and a gate extend from a principal surface of the silicon carbide body and penetrate the layers. The source and drain trenches are filled with silicon carbide of one conductivity type, whereas the trench for the gate is filled with silicon carbide of a conductivity type that is different from the source and the drain.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.