Semiconductor device and method of manufacturing the same
US6365933B1 · kind B1 · utility
204Cited by
19References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1997 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Oct 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an atmosphere containing a halogen element to carry out gettering of the metal element. The active layer after this process is constituted by an aggregation of a plurality of needle-shaped or column-shaped crystals. A semiconductor device manufactured by using this crystalline structure has extremely high performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.