Induction heated chemical vapor deposition reactor
US6368404B1 · kind B1 · utility
13Cited by
14References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1999 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Apr 23, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition reactor includes a pancake type induction heating device to achieve operating temperature within the reactor chamber. By design of the susceptor, the induction magnetic force created at the top surface of the susceptor is insufficient to effect levitation of the wafer carrier during epitaxial deposition at high temperatures in the order of about 1500-1800° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.