Photoresist polymers and photoresist compositions containing the same
US6368771B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2000 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Jul 28, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0395
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention discloses photoresist polymers and photoresist compositions containing the same. The photoresist polymer comprises repeating units derived from (a) a compound of Chemical Formula 1; (b) a compound of Chemical Formula 2; (c) a compound of Chemical Formula 3; and optionally (d) maleic anhydride. Photoresist compositions containing the polymers of the present invention have superior etching resistance, heat resistance and adhesiveness, are easily developed in the 2.38% aqueous TMAH solution, and are therefore suitable for lithography processes using ultraviolet light sources when fabricating a minute circuit of a high integration semiconductor device: wherein R, R*, R3, R4, R′, R″, R′″, X, Y, V, W, i and j are as described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.