Cha-Won Koh
55Patents
9h-index
70Co-inventors
81Inventor score
Filing activity: May 27, 1997 → Feb 7, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9520289B2 | Methods of forming a pattern of a semiconductor device | Electricity | 358 | Active |
| US9772555B2 | Methods of forming patterns using photoresists | Electricity | 49 | Active |
| US6599844B2 | Method and forming fine patterns of semiconductor devices using passivation layers | Physics | 33 | Expired |
| US6235447A | Photoresist monomers, polymers thereof, and photoresist compositions containing the same | Physics | 20 | Expired |
| US8003543B2 | Method of forming a hard mask and method of forming a fine pattern of semiconductor device using the same | Electricity | 17 | Active |
| US7540970B2 | Methods of fabricating a semiconductor device | Electricity | 14 | Active |
| US8278221B2 | Method of forming a hard mask and method of forming a fine pattern of semiconductor device using the same | Electricity | 14 | Active |
| US7732341B2 | Method of forming a hard mask and method of forming a fine pattern of semiconductor device using the same | Electricity | 12 | Active |
| US6764806B2 | Over-coating composition for photoresist, and processes for forming photoresist patterns using the same | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7892982B2 | Method for forming fine patterns of a semiconductor device using a double patterning process | Electricity | 9 | Active |
| US6348296B1 | Copolymer resin, preparation thereof, and photoresist using the same | Chemistry; Metallurgy | 7 | Expired |
| US9147687B2 | Methods of fabricating semiconductor devices | Electricity | 7 | Active |
| US10797056B2 | Semiconductor device and method of manufacturing the same | Electricity | 6 | Active |
| US6410670B1 | Photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same | Physics | 5 | Expired |
| US7560768B2 | Nonvolatile memory device and method of manufacturing the same | Electricity | 5 | Active |
| US6200731A | Photoresist cross-linking monomers, photoresist polymers and photoresist compositions comprising the same | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7452825B2 | Method of forming a mask structure and method of forming a minute pattern using the same | Electricity | 5 | Active |
| US7862988B2 | Method for forming patterns of semiconductor device | Electricity | 5 | Active |
| US5888698A | Photoresist film for deep ultra violet and method for forming photoresist film pattern using the same | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6664031B2 | Process for forming photoresist pattern by using gas phase amine treatment | Physics | 4 | Expired |
| US6368771B1 | Photoresist polymers and photoresist compositions containing the same | Physics | 4 | Expired |
| US7687369B2 | Method of forming fine metal patterns for a semiconductor device using a damascene process | Electricity | 4 | Active |
| US6399272B1 | Phenylenediamine derivative-type additive useful for a chemically amplified photoresist | Physics | 4 | Expired |
| US7787301B2 | Flash memory device using double patterning technology and method of manufacturing the same | Electricity | 3 | Active |
| US6833326B2 | Method for forming fine patterns in semiconductor device | Physics | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.