Method of forming an EPI-channel in a semiconductor device
US6368925B2 · kind B2 · utility
12Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2001 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Jun 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0278
Abstract
An epi-channel of a uniform shape is formed by adjusting the temperature and pressure of H2 bake process to prevent the etching of a separation oxide at an interface of an active region and a field region thereby ensuring that an epi-channel is formed having a uniform shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.