Dae-Hee Weon
8Patents
6h-index
9Co-inventors
52Inventor score
Filing activity: Dec 26, 2000 → Jul 17, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6544822B2 | Method for fabricating MOSFET device | Electricity | 56 | Expired |
| US6599803B2 | Method for fabricating semiconductor device | Electricity | 18 | Expired |
| US6368925B2 | Method of forming an EPI-channel in a semiconductor device | Electricity | 12 | Expired |
| US7283029B2 | 3-D transformer for high-frequency applications | Emerging Cross-Sectional Technologies | 9 | Expired |
| US9589899B2 | Semiconductor device having a gate cutting region and a cross-coupling pattern between gate structures | Electricity | 8 | Active |
| US6472303B1 | Method of forming a contact plug for a semiconductor device | Electricity | 7 | Expired |
| US6407005B2 | Method for forming semiconductor device to prevent electric field concentration from being generated at corner of active region | Electricity | 3 | Expired |
| USRE45232E1 | Method of forming a contact plug for a semiconductor device | General | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.