Thin tensile layers in shallow trench isolation and method of making same
US6368931B1 · kind B1 · utility
149Cited by
4References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2000 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Mar 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of forming an isolation trench that comprises forming a recess in a substrate and forming a film upon the sidewall under conditions that cause the film to have a tensile load. The method includes filling the recess with a material that imparts a compressive load upon the film under conditions that oppose the tensile load. The present invention is particularly well suited for shallow isolation trench filling in the 0.13 micron geometry range, and smaller.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.