Patent · US Expired

Method for producing diodes

US6368932B1 · kind B1 · utility

3Cited by
0References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 6, 2000
Grant dateApr 9, 2002
Priority date
Expiry dateSep 6, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D8/25

Abstract

A method is proposed that functions to produce Zener diodes. The method includes a two-part film diffusion step for producing flatter and deeper doping profiles using neutral films.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.