Patent · US Expired

Semiconductor method of manufacture

US6368943B1 · kind B1 · utility

5Cited by
4References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 12, 2000
Grant dateApr 9, 2002
Priority date
Expiry dateMay 12, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/78
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

On the scribe line area formed between a plurality of semiconductor clip areas on a semiconductor wafer, there is provided a chipping prevention portion constituted by a double groove consisting of the first and second grooves. Thus, the entry of chipping into the semiconductor chip area is prevented when dicing the semiconductor wafer along the scribe line area provided between each of the semiconductor chip areas. In this respect, an insulating film may be formed on the surface of the semiconductor wafer on the side of an element forming area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.