Semiconductor device and method of manufacturing the semiconductor device
US6369410B1 · kind B1 · utility
78Cited by
4References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1998 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Dec 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.