CMOS image sensor and method for fabricating the same
US6369417B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 16, 2001 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Aug 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A CMOS image sensor fabrication method that is capable of preventing a surface of a metal line from being damaged or contaminated is provided. The formed CMOS image sensor includes: a semiconductor structure, wherein the semiconductor structure includes a unit pixel area and a pad area; a metal line formed on the pad area, wherein a portion of the metal line is exposed; a passivation layer formed on the unit pixel area and on the metal line such that the exposed portion is left exposed; a planarized photoresist formed on a portion of the passivation layer; a micro-lens formed on a portion of the planarized photoresist; and an oxide layer formed on the entire formed structure such that the exposed portion is left exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.