Sonic assisted strengthening of gate oxides
US6372520B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1998 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Jul 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for repairing and improving the endurance characteristics of process damaged oxide film formed in a semiconductor device involving sonic annealing by vibrating or oscillating a wafer at a predetermined frequency, wave amplitude, and duration. A signal from a frequency generator is amplified by a voltage amplifier and then sent to a speaker or other acoustic device for the production of vibrating acoustical wave energy. This acoustical wave energy is then directed at a submicron device wafer during a specified time period in order to anneal the gate oxide and, thereby, improve the characteristics of the oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.