Method of manufacturing V-shaped flash memory
US6372564B1 · kind B1 · utility
14Cited by
6References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 30, 2000 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Mar 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A method of manufacturing a V-shaped flash memory. The V-shaped stack gate is formed by implanting ions into a substrate to form a buried source line using a mask, and then forming a V-shaped trench that exposes the buried source line in the substrate. A V-shaped word line stack gate is next formed over the trench and the substrate next to the trench. A common drain terminal is formed in the substrate on each side of the V-shaped stack gate. The drain terminal is electrically connected to a bit line by forming a contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.