Self-aligned MOSFET with electrically active mask

US6372592B1 · kind B1 · utility

Assignee

• United States of America as represented by the Secretary of the Air Force · US

Inventors

• Stephen D. Russell · San Diego, US
• Douglas A. Sexton · San Diego, US
• Bruce W. Offord · San Diego, US
• George Imthurn · San Diego, US

Key dates

• Filing date: Dec 18, 1996
• Grant date: Apr 16, 2002
• Expiry date: Dec 18, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6743

Abstract

A method for making a self-aligned FET with an electrically active mask comprises the steps of forming a semiconductor layer on an insulating substrate, forming an electrically nonconductive oxide layer on the semiconductor layer, forming an electrically conductive metal layer on the oxide layer, patterning the metal layer and the oxide layer to form an electrically active gate on semiconductor layer, introducing dopants into the semiconductor layer to form a source region and a drain region masked by the metal gate, and illuminating the source and the drain regions with a pulsed excimer laser having a wavelength from about 150 nm to 350 nm to anneal the source region and the drain region.