Method of producing a radiation sensor
US6372656B1 · kind B1 · utility
8Cited by
9References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1999 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Sep 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/10
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of producing an infrared sensor on a semiconductor substrate involves defining at least one area on the surface of the semiconductor substrate where a recess is to be created in the semiconductor substrate, depositing a membrane on the surface, applying a radiation absorber to the membrane in the defined area, applying thermoelements with a hot contact in thermal contact with the radiation absorber and a cold contact in thermal contact with the semiconductor substrate. In this method, an opening is provided in the membrane in the defined area, and the semiconductor substrate is etched through the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.