Reducing contamination induced scumming, for semiconductor device, by ashing
US6372658B1 · kind B1 · utility
1Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1998 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Sep 21, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device is manufactured using an ashing process to eliminate the adverse effects of contamination, such as amine-airborne contamination. Consistent with one embodiment of the present invention, the semiconductor device is formed by applying a DUV-type photoresist over the wafer surface, exposing the photoresist to DUV light, baking the wafer, and then ashing the wafer in a highly-oxidized environment to remove insoluble amine-related resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.