Process for producing dielectric thin films
US6372666B1 · kind B1 · utility
20Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1999 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Aug 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a nanoporous silica dielectric coating on a substrate. A substrate containing a deposited film is suspended within a sealable hotplate, while remaining free of contact with the hotplate. The hotplate is sealed and an inert gas is flowed across the substrate. The hotplate is heated to a temperature of from about 350° C. or higher, and the substrate is forced to contact the heated hotplate. The substrate is heated for a time that sufficiently removes outgassing remnants from the resultant nanoporous dielectric coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.