Silicon gyro with integrated driving and sensing structures
US6374672B1 · kind B1 · utility
12Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2000 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Aug 4, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01C19/5719
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A rotation sensor is formed of three semiconductor wafers. A first wafer comprises a frame that surrounds a paddle. The rotation-sensitive paddle is surrounded on either of the opposed sides of the first wafer by rings of driven elements formed of radially-directed plateaus in the semiconductor material. Second and third wafers sandwich the first wafer. Each of the second and third wafers includes a first surface in which are formed concentric rings of driver and pickoff electrodes. In a preferred embodiment, the rings of pickoff electrodes are split into two semicircular arcs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.