Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method
US6376332B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2000 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Feb 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54493
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonded substrate stack formed by bonding first and second substrates is appropriately separated. A first substrate having a porous layer inside and a single-crystal Si layer and insulating layer on the porous layer is brought into tight contact with a second substrate while shifting their central positions to prepare a bonded substrate stack having a projecting portion at which the outer peripheral edge of the first substrate projects outside that of the second substrate. First, a fluid is ejected to the projecting portion to form a separation start portion, and then, separation is started from the separation start portion while rotating the bonded substrate stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.