Epitaxial SiOx barrier/insulation layer
US6376337B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1998 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Nov 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing an insulating or barrier layer, useful for semiconductor devices, comprises depositing a layer of silicon and at least one additional element on said silicon substrate whereby said deposited layer is substantially free of defects such that epitaxial silicon substantially free of defects can be deposited on said deposited layer. Alternatively, a monolayer of one or more elements, preferably comprising oxygen, is absorbed on a silicon substrate. A plurality of insulating layers sandwiched between epitaxial silicon forms a barrier composite. Semiconductor devices are disclosed which comprise said barrier composite.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.