Process for forming a semiconductor device and a conductive structure
US6376349B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2000 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Jan 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28079
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and conductive structures can be formed having a metallic layer. In one embodiment, a semiconductor device includes an amorphous metallic layer (22) and a crystalline metallic layer (42). The amorphous metallic layer (22) helps to reduce the likelihood of penetration of contaminants through the amorphous metallic layer (22). A more conductive crystalline metallic layer (42) can be formed on the amorphous metallic layer (22) to help keep resistivity relatively low. When forming a conductive structure, a metal-containing gas and a scavenger gas flow simultaneously during at least one point in time. The conductive structure may be part of a gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.