Approaches for mitigating the narrow poly-line effect in silicide formation
US6376372B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1995 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Jun 2, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicide process using a pre-anneal amorphization implant prior to silicide anneal. A layer of titanium is deposited and reacted to form titanium silicide (32) and titanium nitride. The titanium nitride is removed and a pre-anneal amorphization implant is performed to enable increased transformation of the silicide (32) from a higher resistivity phase to a lower resistivity phase. A heavy dopant species (40) is used for the pre-anneal amorphization implant such as arsenic, antimony, or germanium. After the implant, the silicide anneal is performed to accomplish the transformation. An advantage of the invention is providing a silicide process having reduced silicide sheet resistance for narrow polysilicon lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.