Heterojunction bipolar transistor with reduced thermal resistance
US6376867B1 · kind B1 · utility
10Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2000 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Aug 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/821
Abstract
The performance of a heterojunction bipolar transistor (HBT) operating at high power is limited by the power that can be dissipated by the device. This, in turn, is limited by the thermal resistance of the device to heat dissipation. In a typical HBT, and especially InP-based HBTs, heat generated during operation is concentrated near the collector-base junction. In order to more efficiently dissipate heat downward through the device to the substrate, both the collector and the sub-collector are formed of InP, which has a substantially lower thermal resistance than other typically used semiconductor materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.