Wafer to measure pressure at a number of points in a process chamber
US6378378B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | May 2, 2001 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | May 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48091
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A device for measuring pressure at several locations in a processing chamber under dynamic Conditions, i.e. when gas is flowing into and/or out of the chamber. A substrate has a plurality of pressure sensors electrically coupled to a measurement instrument. Conditions are established within a processing chamber to determine the effects of various process parameters, such as gas flow, on local pressures, and the local pressures are measured. The test conditions may simulate a process or may be standard test conditions to evaluate chamber configurations or hardware. The pressure test substrate may be calibrated under static conditions to improve the accuracy of the pressure readings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.