Electrodeposition chemistry for filling of apertures with reflective metal
US6379522B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 1999 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Jan 11, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D7/123
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyalkylene glycols (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 10 ppm to about 2000 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.1 ppm to about 1000 ppm of the plating solution. The plating solution may be further improved by adding 2-amino-5-methyl-1,3,4-thiadiazole which is used at concentrations from 0 ppm to about 20 ppm of the plating solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.