Semiconductor device formed with metal wiring on a wafer by chemical mechanical polishing, and method of manufacturing the same
US6379782B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2001 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Apr 24, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating layer is formed on a whole surface of a wafer. Recesses such as wiring grooves are formed in the insulating layer. A part of the insulating layer is removed on a region whose distance from the peripheral edge of the wafer is a value x or less. After a conductive film is formed on the whole wafer surface, a part is removed on a region whose distance from the peripheral wafer edge is a value y (y<x) or less. Chemical mechanical polishing removes a part of the conductive except in the recesses. Thereafter, wet etching removes part of the conductive film on a region from the peripheral wafer edge of z (x<z) or less. An interlayer insulating film is formed on the whole wafer surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.