Positive photoresist composition and process for forming resist pattern using same
US6379859B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 1999 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Jun 1, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/022
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are a positive photoresist composition including (A) an alkali-soluble resin, (B) a photosensitizer containing a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and (C) e.g., 2,6-bis(2,5-dimethyl-4-hydroxybenzyl)-4-methylphenol; and a process including the steps of coating the composition onto a 8 to 12-inch substrate, drying, exposing and developing the same. The composition which can form a pattern having a good shape whose dimensional changes are minimized in a wide range over surface of the substrate, particularly in processes using a large-diameter substrate, and the process for forming a resist pattern using the composition are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.