Semiconductor with laterally non-uniform channel doping profile and manufacturing method therefor
US6380041B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2000 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Oct 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ultra-large scale integrated circuit semiconductor device having a laterally non-uniform channel doping profile is manufactured by using a Group IV element implant at an implant angle of between 0° to 60° from the vertical to create interstitials in a doped silicon substrate under the gate of the semiconductor device. After creation of the interstitials, a channel doping implantation is performed using a Group III or Group V element which is also implanted at an implant angle of between 0° to 60° from the vertical. A rapid thermal anneal is then used to drive the dopant laterally into the channel of the semiconductor device by transient enhanced diffusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.