Interconnection structure and fabrication process therefor
US6380065B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1999 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Nov 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a related interconnection structure that is formed by filling a metal, there have been problems, since defective connection occurs due to generation of voids and other features caused by poor filling of the metal, which entails reduction in reliability, and contact resistance is large due to a barrier metal layer at a contact portion. A novel interconnection structure is provided which comprises: a recess (for example, a contact hole, a trench, or a trench and a contact hole formed at a bottom of the trench), which is connected onto a conductive material mass formed in an insulating film, and which is formed in the insulating film; a barrier metal layer formed on side walls of the recess; and metal material masses filled in the interior of the recess, wherein the metal material masses are formed with a metal repeatedly filled into the recess over a plurality of times, and a metal material mass and a conductive material mass are directly connected to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.